The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Jul. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sai-Hooi Yeong, Zhubei, TW;

Yen-Chieh Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a first fin and a second fin on a semiconductor substrate. The semiconductor structure also includes an epitaxial structure on the first fin and the second fin. The semiconductor structure further includes outer spacers on outer sidewalls of the epitaxial structure. In addition, the semiconductor structure includes an inner spacer structure between the first fin and the second fin and covering inner sidewalls of the epitaxial structure. A top surface of the inner spacer structure is exposed to an air gap formed between the epitaxial structure and the inner spacer structure.


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