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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12131901 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Jul. 06, 2020

Semiconductor structure with patterned fin structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Shiang-Bau Wang, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Stanetta D Isaac

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/267 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); H01L 29/66795 (2013.01); H01L 29/165 (2013.01); H01L 29/267 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

Semiconductor structures are provided. The semiconductor structure includes a substrate and a first fin structure and a second fin structure formed over the substrate. In addition, the second fin structure is higher than the first fin structure. The semiconductor structure further includes an isolation structure formed around the second fin structure and covering a top surface of the first fin structure and a gate structure formed over the first fin structure and the second fin structure. In addition, the top surface of the first fin structure is not flat.

Find Patent Forward Citations

Wang, Shiang-Bau. (2024). Semiconductor structure with patterned fin structure (U.S. Patent No. 12131901). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12131901

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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