The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Aug. 15, 2022
Applicant:
Disco Corporation, Tokyo, JP;
Inventors:
Assignee:
DISCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/06 (2006.01); C30B 29/06 (2006.01); C30B 29/64 (2006.01); C30B 30/00 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 29/64 (2013.01); C30B 30/00 (2013.01); C30B 33/06 (2013.01);
Abstract
After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.