The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jul. 13, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Peter Rabkin, Cupertino, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H10B 51/30 (2023.02);
Abstract
A memory device includes a ferroelectric semiconductor channel, a source region contacting a first portion of the ferroelectric semiconductor channel, a drain region located above the source region and contacting a second portion of the ferroelectric semiconductor channel located above the first portion, a word line, and a gate dielectric located between the word line and the ferroelectric semiconductor channel.