The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jun. 01, 2021
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Yang Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66515 (2013.01); H01L 21/28518 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device and a forming method thereof are provided. The forming method includes forming an initial dummy gate structure on a substrate. The initial dummy gate structure extends along a first direction. The forming method also includes forming a source/drain doped layer in the substrate on two sides of the initial dummy gate structure, forming an initial conductive layer on the source/drain doped layer and covering a sidewall and a top surface of the source/drain doped layer, and after forming the initial conductive layer, removing the initial dummy gate structure.


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