The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Feb. 25, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shahaji B. More, Hsinchu, TW;
Chandrashekhar Prakash Savant, Hsinchu, TW;
Tien-Wei Yu, Kaohsiung, TW;
Chia-Ming Tsai, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A device includes a semiconductor region, an interfacial layer over the semiconductor region, the interfacial layer including a semiconductor oxide, a high-k dielectric layer over the interfacial layer, and an intermixing layer over the high-k dielectric layer. The intermixing layer includes oxygen, a metal in the high-k dielectric layer, and an additional metal. A work-function layer is over the intermixing layer. A filling-metal region is over the work-function layer.