The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jul. 26, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yi-Fan Li, Tainan, TW;
Wen-Yen Huang, Changhua County, TW;
Shih-Min Chou, Tainan, TW;
Zhen Wu, Kaohsiung, TW;
Nien-Ting Ho, Tainan, TW;
Chih-Chiang Wu, Tainan, TW;
Ti-Bin Chen, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 27/092 (2013.01); H01L 29/401 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.