The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Feb. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chih-Kuang Kao, Hsin-Chu County, TW;

Ta-Chih Peng, Hsinchu, TW;

Ming-Hong Kao, Hsinchu, TW;

Huei-Wen Yang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/02532 (2013.01); H01L 21/0254 (2013.01); H01L 21/02554 (2013.01); H01L 24/17 (2013.01); H01L 25/0657 (2013.01); H01L 28/60 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including a capacitor. The capacitor includes a first electrode and a second electrode respectively electrically connected to a first conductor and a second conductor; and a first dielectric layer between the first electrode and the second electrode. In some embodiments, the first dielectric layer contacts with a sidewall surface of the first conductor. The semiconductor structure further includes a second dielectric layer over and adjacent to the capacitor. A method of forming the semiconductor package is also provided.


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Kao, Chih-Kuang. (2024). Semiconductor structure and method of forming the same (U.S. Patent No. 12125782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12125782

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