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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12125749 B1

PDFFull Text
Date of Patent:
Oct. 22, 2024

Filed:

Sep. 20, 2021

Semiconductor structure and method for forming same

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Yuanhao Gao, Hefei, CN;

Assignee:

CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01);
Abstract

Embodiments of this application provide a semiconductor structure and a method for forming the same. The method for forming the semiconductor structure includes: a first substrate is provided; the back surface of the first substrate is etched to form a trench; a conductive layer is formed in the trench; a first conductive column that extends into the trench is formed at a back surface of the first substrate; a device layer is formed at a front surface of the first substrate, and the device layer includes a storage array and a contact structure; and a second conductive column that penetrates through the device layer and extends into the first substrate is formed; the first conductive column is electrically connected with the second conductive column through the conductive layer.

Find Patent Forward Citations

Gao, Yuanhao. (2024). Semiconductor structure and method for forming same (U.S. Patent No. 12125749). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12125749

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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