The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Sep. 15, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ruitong Xiong, San Jose, CA (US);

Bo Xie, San Jose, CA (US);

Xiaobo Li, Sunnyvale, CA (US);

Yijun Liu, Santa Clara, CA (US);

Li-Qun Xia, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); C23C 16/401 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01J 37/32522 (2013.01); H01J 37/32889 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/02348 (2013.01); H01J 2237/332 (2013.01);
Abstract

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at between about 50 W and 1,000 W, at a pulsing frequency below about 100,000 Hz, and at a duty cycle between about 5% and 95%. The methods may include forming a layer of material on the substrate. The layer of material may include a silicon-containing material.


Find Patent Forward Citations

Xiong, Ruitong. (2024). Rf pulsing assisted low-k film deposition with high mechanical strength (U.S. Patent No. 12125675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12125675

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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