The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Aug. 06, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.