The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
May. 12, 2022
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Humayun Kabir, Gilbert, AZ (US);
Ibrahim Khalil, Gilbert, AZ (US);
Daniel Joseph Lamey, Chandler, AZ (US);
Yu-Ting David Wu, Schaumburg, IL (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/823475 (2013.01); H01L 25/105 (2013.01); H01L 27/088 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H03K 17/6871 (2013.01);
Abstract
A device having a reference transistor fabricated within the same semiconductor substrate as a primary transistor (e.g., configured for use in a radiofrequency amplifier or other active circuit) has a shared metallization area coupled to a current terminal of both transistors configured to shield a control terminal of the reference transistor from coupling of alternating current interference from alternating currents within the primary transistor.