The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Mar. 09, 2022
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Alexander Roth, Zeitlarn, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/15 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 21/4846 (2013.01); H01L 21/4857 (2013.01); H01L 23/15 (2013.01); H01L 23/367 (2013.01); H01L 23/49894 (2013.01); H01L 24/30 (2013.01); H01L 24/33 (2013.01);
Abstract
A DBC substrate for power semiconductor devices includes a ceramic workpiece of a non-oxide ceramic having first and second opposing main sides, the ceramic workpiece having a thickness of 10 μm or more measured between the first and second main sides, a copper-containing layer disposed over the first main side, the copper-containing layer having a thickness of 5 μm or more, and an intermediate layer comprising AlOdisposed between the ceramic workpiece and the copper-containing layer.