The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Feb. 11, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Luguang Wang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Provided are a heat dissipation structure, a method for forming a heat dissipation structure, and a semiconductor structure. The heat dissipation structure includes a first heat dissipation ring and a second heat dissipation ring. The first heat dissipation ring is formed in a dielectric layer around a Through Silicon Via (TSV) and in contact with the TSV. The TSV passes through a silicon substrate and the dielectric layer. The second heat dissipation ring is formed around the first heat dissipation ring, and in contact with the first heat dissipation ring. The second heat dissipation ring has a heat dissipation gap within it. A dimension of the second heat dissipation ring in a first direction is less than that of the first heat dissipation ring in the first direction. The first direction is a thickness direction of the silicon substrate.