The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Aug. 14, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Fu-Jung Chuang, Kaohsiung, TW;

Po-Jen Chuang, Kaohsiung, TW;

Yu-Ren Wang, Tainan, TW;

Chi-Mao Hsu, Tainan, TW;

Chia-Ming Kuo, Kaohsiung, TW;

Guan-Wei Huang, Tainan, TW;

Chun-Hsien Lin, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823878 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.


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