The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

May. 25, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Deepak Chandra Pandey, Uttarakhand, IN;

Haitao Liu, Boise, ID (US);

Kamal M. Karda, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/792 (2006.01); H10B 12/00 (2023.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10B 63/00 (2023.01); H10B 99/00 (2023.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823487 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823885 (2013.01); H01L 23/528 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01); H01L 29/78642 (2013.01); H01L 29/7926 (2013.01); H10B 12/395 (2023.02); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10B 63/34 (2023.02); H10B 99/00 (2023.02); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01);
Abstract

An array of vertical transistors comprises spaced pillars individually comprising a channel region of individual vertical transistors. A horizontally-elongated conductor line directly electrically couples together individual of the channel regions of the pillars of a plurality of the vertical transistors. An upper source/drain region is above the individual channel regions of the pillars, a lower source/drain region is below the individual channel regions of the pillars, and a conductive gate line is operatively aside the individual channel regions of the pillars and that interconnects multiple of the vertical transistors. Methods are disclosed.


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