The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Dec. 21, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Bo Xie, San Jose, CA (US);
Ruitong Xiong, Santa Clara, CA (US);
Sure K. Ngo, Dublin, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Yijun Liu, Santa Clara, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02348 (2013.01); C23C 16/401 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01);
Abstract
Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.