The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Jun. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yueh-Chuan Lee, Hsinchu, TW;

Chia-Chan Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/0257 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H01L 29/0638 (2013.01);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes a gate structure on a substrate. A doped region is within the substrate. One or more dielectric materials are within a recess formed by one or more surfaces of the substrate. The doped region is laterally between the gate structure and the recess. A doped epitaxial material is within the recess and between the one or more dielectric materials and the doped region. The doped epitaxial material is asymmetric about a vertical line that extends through a lateral center of the doped epitaxial material.


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