The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Mar. 04, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Tsui-Ling Yen, Hsinchu County, TW;
Chien-Hung Chen, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01);
Abstract
A semiconductor device includes a conductive feature, a dielectric layer disposed over the conductive feature, and a contact feature extending through the dielectric layer. The contact feature has an upper portion and a lower portion. The upper portion is spaced apart from the dielectric layer with a spacer layer. The lower portion is electrically coupled to the conductive feature and in contact with the dielectric layer.