The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Feb. 24, 2022
United Microelectronics Corp., Hsinchu, TW;
Zhi-Biao Zhou, Singapore, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a device substrate, having a device structure layer and a buried dielectric layer, wherein the buried dielectric layer is disposed on a semiconductor layer of the device structure layer and the device substrate comprises a device structure. A metal layer is disposed on the buried dielectric layer and surrounded by a first inter-layer dielectric (ILD) layer. A region of the metal layer has a plurality of openings. The buried dielectric layer has an air gap under and exposing the region of the metal layer with the openings, wherein the air gap is located above the device structure in the device substrate. A second ILD layer is disposed on the metal layer and sealing the air gap at the openings of the metal layer.