The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Nov. 22, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Tao Li, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/28556 (2013.01);
Abstract
The embodiment of the present invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises: a substrate having a trench therein; a first layer covering the bottom and the sidewall of the trench; and a second layer covering the surface of the first layer, wherein the step coverage of the second layer is different from the step coverage of the first layer. The embodiment of the invention is conducive to obtaining a multi-layer structure with preset step coverage.