The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Jan. 12, 2022
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Masaki Ishiguro, Tokyo, JP;

Masahiro Sumiya, Tokyo, JP;

Shigeru Shirayone, Tokyo, JP;

Kazuyuki Ikenaga, Tokyo, JP;

Tomoyuki Tamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32532 (2013.01); H01J 37/32082 (2013.01); H01J 37/32146 (2013.01); H01J 37/32706 (2013.01); H01J 37/32935 (2013.01); H01J 37/3299 (2013.01);
Abstract

A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.


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