The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Jul. 29, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Bryan David Kerstetter, Kuna, ID (US);

Alan J. Wilson, Boise, ID (US);

Donald Martin Morgan, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/20 (2006.01); G11C 7/10 (2006.01); G11C 7/24 (2006.01);
U.S. Cl.
CPC ...
G11C 7/24 (2013.01); G11C 7/1063 (2013.01); G11C 7/1066 (2013.01); G11C 8/20 (2013.01);
Abstract

Methods, systems, and devices for memory row-hammer mitigation are described. A memory device may operate based on a scheme that is continuous across power cycles. For example, the memory device may access a region if a value of a counter does not satisfy a threshold value and may access the region if a value of the counter satisfies the threshold value. Upon transitioning power states, the value of the counter may be stored to a non-volatile memory such that it may be accessed when transitioning back to the original power state (e.g., an 'ON' state). Accordingly, the value of the counter may be maintained across power cycles.


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