The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 01, 2021
Applicant:
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Inventors:
Fujio Masuoka, Tokyo, JP;
Nozomu Harada, Tokyo, JP;
Assignee:
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A gate TiN layer of adjacent Si pillars among Si pillars contacts at entire channel length in a vertical direction. SiOlayers are formed, surrounding the Si pillars, and mask material layers on top thereof, and being spaced from each other. Then, a SiN layer is formed surrounding the SiOlayers. Then, the mask material layers and the SiOlayers are removed. Then, a Player and Nlayers which upper surfaces are lower than an upper surface position of the SiN layer are formed surrounding each top of the Si pillars by selective epitaxial crystal growth method.