The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jan. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ching-Hung Kao, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes an active gate metal structure disposed over a substrate, the active gate metal structure having a first sidewall and a second sidewall opposite to each other. The semiconductor device includes a first source/drain region disposed adjacent the first sidewall of the active gate metal structure with a first lateral distance. The semiconductor device includes a second source/drain region disposed adjacent the second sidewall of the active gate metal structure with a second lateral distance, wherein the second lateral distance is substantially greater than the first lateral distance. The semiconductor device includes a resist protective oxide (RPO) comprising a first portion extending over a portion of a major surface of the substrate that is laterally located between the second sidewall and the second source/drain region, wherein the RPO has no portion extending over a top surface of the active gate metal structure.