The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Sep. 15, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jinseong Heo, Seoul, KR;
Taehwan Moon, Suwon-si, KR;
Seunggeol Nam, Suwon-si, KR;
Sanghyun Jo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 28/60 (2013.01); H01L 29/0665 (2013.01); H01L 29/40111 (2019.08); H01L 29/42392 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H10B 53/30 (2023.02);
Abstract
A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.