The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Apr. 21, 2021
Infineon Technologies Ag, Neubiberg, DE;
Ingo Muri, Villach, AT;
Johannes Konrad Baumgartl, Riegersdorf, AT;
Oliver Hellmund, Neubiberg, DE;
Jacob Tillmann Ludwig, Villach, AT;
Iris Moder, Villach, AT;
Thomas Neidhart, Klagenfurt, AT;
Gerhard Schmidt, Wernberg-Wudmath, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.