The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Sep. 05, 2023
Infineon Technologies Ag, Neubiberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of producing a semiconductor device includes forming a plurality of transistor cells in a SiC substrate and electrically connected in parallel to form a transistor having a specified operating temperature range. Forming each transistor cell includes forming a gate structure having a gate electrode, and a gate dielectric stack separating the gate electrode from the SiC substrate and including a ferroelectric insulator. The method further includes doping the ferroelectric insulator with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile