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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12107015 B1

PDFFull Text
Date of Patent:
Oct. 01, 2024

Filed:

Apr. 16, 2021

Nmos and pmos transistor gates with hafnium oxide layers and lanthanum oxide layers

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shahaji B. More, Hsinchu, TW;

Zheng-Yang Pan, Zhubei, TW;

Shih-Chieh Chang, Taipei, TW;

Chun Chieh Wang, Kaohsiung, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Joseph C Nicely

Assistant Examiner:

Lamont B Koo

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02192 (2013.01); H01L 21/28088 (2013.01); H01L 21/823821 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/42364 (2013.01); H01L 29/4966 (2013.01); H01L 29/511 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 21/02271 (2013.01); H01L 21/0228 (2013.01); H01L 21/28194 (2013.01); H01L 21/823418 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/7848 (2013.01);
Abstract

A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.

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Quick Actions:

More, Shahaji. (2024). Nmos and pmos transistor gates with hafnium oxide layers and lanthanum oxide layers (U.S. Patent No. 12107015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12107015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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