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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12106791 B1

PDFFull Text
Date of Patent:
Oct. 01, 2024

Filed:

Jun. 30, 2022

Doped bisb (012) or undoped bisb (001) topological insulator with genife buffer layer and/or interlayer for sot based sensor, memory, and storage devices

Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Quang Le, San Jose, CA (US);

Brian R. York, San Jose, CA (US);

Cherngye Hwang, San Jose, CA (US);

Xiaoyong Liu, San Jose, CA (US);

Michael A. Gribelyuk, San Jose, CA (US);

Xiaoyu Xu, San Jose, CA (US);

Susumu Okamura, San Jose, CA (US);

Kuok San Ho, Emerald Hills, CA (US);

Hisashi Takano, San Jose, CA (US);

Randy G. Simmons, San Jose, CA (US);

Assignee:

Western Digital Technologies, Inc., San Jose, CA (US);

Attorney:

PATTERSON + SHERIDAN, LLP

Primary Examiner:

Muna A Techane

Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11B 5/39 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11B 5/3906 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GeNiFe layers, where at least one GeNiFe layer is disposed in contact with the BiSb layer. The GeNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GeNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GeNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GeNiFe layer allows the crystal orientation of the BiSb layer to be selected.

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