The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Aug. 24, 2020
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Kota Suzuki, Tokyo, JP;

Kayo Chaen, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/38 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/38 (2013.01); G03F 1/48 (2013.01); G03F 7/20 (2013.01);
Abstract

Provided is a substrate with a thin film for manufacturing a reflective mask that at least does not adversely affect performance of the reflective mask even when a thin film of a substrate with the thin film such as a reflective mask blank comprises impurities. A substrate with a thin film comprises: a substrate; and at least one thin film formed on a main surface of the substrate. The thin film comprises a matrix material constituting the thin film and a small-amount material other than the matrix material. When secondary ion intensity emitted from the thin film is measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS), a ratio (I/I) of secondary ion intensity (I) of at least one of the small-amount material in the thin film to secondary ion intensity (I) of the matrix material is more than 0 and 0.300 or less.


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