The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Nov. 08, 2023
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Ramanathan Gandhi, Boise, ID (US);
Karthik Sarpatwari, Boise, ID (US);
Scott E. Sills, Boise, ID (US);
Sameer Chhajed, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.