The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Feb. 10, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/82 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract
The embodiments herein relate to semiconductor memory devices and methods of forming the same. A semiconductor memory device is provided. The semiconductor memory device includes a memory cell having a first electrode, a second electrode, a switching layer, and a via structure. The second electrode is adjacent to a side of the first electrode and the switching layer overlays uppermost surfaces of the first and second electrodes. The via structure is over the uppermost surface of the second electrode.