The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Apr. 21, 2022
Changxin Memory Technologies, Inc., Anhui, CN;
Qingsong Du, Hefei, CN;
Wei Chang, Hefei, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Abstract
A semiconductor structure and the fabrication method thereof are provided. The semiconductor structure includes: a substrate including a first doped region and a second doped region; a first selection transistor and a second selection transistor located in the substrate; a conductive layer located between the first doped region and the second doped region; a resistive dielectric layer located on sidewalls of the conductive layer, where the conductive layer, the first doped region, and a portion of the resistive dielectric layer facing the first doped region constitute a first variable resistor, and the conductive layer, the second doped region, and a portion of the resistive dielectric layer facing the second doped region constitute a second variable resistor; and an isolation dielectric layer located between the conductive layer and the substrate. The semiconductor structure improves the storage density of resistive random access memory (RRAM).