The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Nov. 11, 2020
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Yiming Zhu, Hefei, CN;
Er-Xuan Ping, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/8234 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 21/823487 (2013.01); H10B 12/395 (2023.02); H10B 61/22 (2023.02);
Abstract
The present invention relates to a semiconductor structure and its forming method, and a memory and its forming method. The semiconductor structure includes a substrate, a vertical transistor on the substrate, and a bit line connected to the bottom of the vertical transistor and disposed between the bottom of the vertical transistor and the substrate. The vertical transistor in such a semiconductor structure has a relatively small plane dimension.