The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Feb. 10, 2022
Strained gate semiconductor device having an interlayer dielectric doped with large species material
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Ta Wu, Hsinchu, TW;
Chii-Ming Wu, Hsinchu, TW;
Shiu-Ko Jangjian, Hsinchu, TW;
Kun-Tzu Lin, Hsinchu, TW;
Lan-Fang Chang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 21/02321 (2013.01); H01L 21/02323 (2013.01); H01L 21/28114 (2013.01); H01L 21/28158 (2013.01); H01L 21/3115 (2013.01); H01L 21/31155 (2013.01); H01L 21/823456 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/512 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7843 (2013.01); H01L 29/7851 (2013.01); H01L 29/495 (2013.01); H01L 29/513 (2013.01);
Abstract
A semiconductor includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a portion doped with a large species material, wherein the portion includes a first sidewall substantially perpendicular to a top-most surface of the ILD, and the portion includes a second sidewall having a positive angle with respect to the first sidewall.