The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Aug. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01); G06F 30/398 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); G06F 119/02 (2020.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01); G06F 30/398 (2020.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 27/0296 (2013.01); G06F 2119/02 (2020.01);
Abstract
A method of fabricating a semiconductor device includes forming a semiconductor substrate having a first protected circuit, and forming a first guard ring around the first protected circuit including: forming a first wall configured to provide a first reference voltage; and forming a second wall configured to provide a second reference voltage different than the first reference voltage.