The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Apr. 22, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Shun Wang, Hefei, CN;

Junjun Zhang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
G06T 7/001 (2013.01); G03F 7/70633 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01);
Abstract

Disclosed are a method and system for overlay error compensation and a storage medium. The method includes that N wafer groups are provided, wherein each wafer group includes M wafers each including a present and previous layer, and N and M are positive integers greater than or equal to 2; for each wafer, a first overlay error is determined according to device structures of the present and previous layers, and a photoetching compensation value is calculated according to the first overlay error; for each wafer group, a first average compensation value is calculated according to photoetching compensation values; a second average compensation value of the N wafer groups is calculated according to first average compensation values; and in response to that the second average compensation value is within a preset range, the second average compensation value is fed to a batch control system to compensate an (N+1)wafer group.


Find Patent Forward Citations

Loading…