The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Apr. 03, 2020
Applicant:

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Tai Hyun Park, Seoul, KR;

Seung Hun Hong, Seoul, KR;

Hyun Seok Song, Gyeonggi-do, KR;

Hye Jun Jin, Seoul, KR;

Sae Ryun Ahn, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); B01F 23/00 (2022.01); B01F 23/41 (2022.01); B01F 101/23 (2022.01); B23Q 17/24 (2006.01); C07K 14/705 (2006.01); C12M 1/34 (2006.01); C12Q 1/04 (2006.01); C12Q 1/18 (2006.01); C12Q 1/686 (2018.01); G01N 21/3577 (2014.01); G01N 21/359 (2014.01); G01N 21/39 (2006.01); G01N 21/45 (2006.01); G01N 27/414 (2006.01); G01N 30/12 (2006.01); G01N 30/68 (2006.01); G01N 30/70 (2006.01); G01N 30/72 (2006.01); G01N 30/88 (2006.01); G01N 33/00 (2006.01); G01N 33/18 (2006.01); G01N 33/50 (2006.01); G01N 33/53 (2006.01); G01N 33/543 (2006.01); G01N 33/68 (2006.01); G01N 33/74 (2006.01); H10K 10/46 (2023.01); H10K 85/00 (2023.01); H10K 85/20 (2023.01);
U.S. Cl.
CPC ...
G01N 33/5438 (2013.01); C07K 14/705 (2013.01); G01N 27/4145 (2013.01); G01N 33/5308 (2013.01); G01N 33/54373 (2013.01); G01N 33/74 (2013.01); H10K 10/46 (2023.02); H10K 85/761 (2023.02); G01N 2333/705 (2013.01); G01N 2333/726 (2013.01); G01N 2400/00 (2013.01); H10K 85/225 (2023.02);
Abstract

The present invention relates to a nanovesicle comprising a heterodimeric G-protein coupled receptor, a method for preparing the nanovesicle, a field effect transistor-based taste sensor comprising the nanovesicle, and a method for manufacturing the taste sensor. The field effect transistor based taste sensor functionalized by the nanovesicle comprising the heterodimer G-protein coupled receptor according to the present invention has excellent sensitivity and selectivity and may highly specifically detect a sweet taste substance in real time, by using the heterodimeric G-protein coupled receptor and the nanovesicle comprising the same.


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