The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Oct. 29, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a forming method thereof are disclosed in the embodiments of the present disclosure. The semiconductor structure includes: a base, wherein a gate dielectric layer defining a groove is provided in the base, a source region and a drain region are located on two opposite sides at a top of the groove, and the groove has an extension direction parallel to a surface of the base; a first gate, including a first work function layer and a first conductive layer, wherein the first work function layer covers a bottom surface and partial sidewall of the groove, and the first conductive layer covers a surface of the first work function layer; and a second gate, including a second work function layer and a second conductive layer, wherein the second gate is laminated on the first gate and has a top surface lower than the surface of the base.