The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Mar. 21, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Thorsten Meyer, Regensburg, DE;
Walter Hartner, Bad Abbach-Peissing, DE;
Maciej Wojnowski, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01); H01L 29/06 (2006.01); H01Q 1/22 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3114 (2013.01); H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 29/0657 (2013.01); H01Q 1/2283 (2013.01); H01L 23/3128 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/8385 (2013.01); H01L 2924/10158 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18162 (2013.01);
Abstract
A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. The recess is arranged over the antenna.