The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 21, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Bin Guo, Singapore, SG;
Hailong Gu, Singapore, SG;
Chin-Chun Huang, Hsinchu County, TW;
Wen Yi Tan, Fujian, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01);
Abstract
A semiconductor device includes a patterned metal layer on a substrate, via conductors on the patterned metal layer, first inter-metal dielectric (IMD) patterns embedded in the patterned metal layer, and a second IMD pattern surrounding the patterned metal layer. Preferably, the first IMD patterns are between and without overlapping the via conductors in a top view.
Guo, Bin. (2024). Semiconductor device having inter-metal dielectric patterns and method for fabricating the same (U.S. Patent No. 12094820). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12094820
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile