The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Nov. 15, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a method of manufacturing a semiconductor device and a semiconductor device. The method of manufacturing a semiconductor device includes: providing a substrate with trenches, and the trenches extending along a thickness direction of the substrate from a first surface of the substrate; forming a first auxiliary layer and a first conductive layer successively in the trenches, and the first conductive layer covering the first auxiliary layer; thinning the substrate on a second surface of the substrate to expose the first auxiliary layer; removing the first auxiliary layer to form first openings; forming a second medium layer on the second surface of the substrate; patterning the second medium layer to form second openings in the second medium layer, and the second openings exposing the first openings; and depositing a second initial conductive layer, the second initial conductive layer filling the first openings and the second openings.