The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Jun. 17, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Tien-Tsai Hung, Singapore, SG;

Yi Liu, Singapore, SG;

Guo-Hai Zhang, Singapore, SG;

Ching-Hwa Tey, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 27/1203 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a wafer structure. The wafer structure has a normal region and a trimmed region adjacent to the normal region. A top surface of the trimmed region is lower than a top surface of the normal region. The semiconductor structure includes a dielectric layer and a conductive layer disposed on the wafer structure in the normal region and the trimmed region. The semiconductor structure includes a protective layer disposed on a portion of the dielectric layer in the trimmed region and a portion of the conductive layer in the trimmed region. The semiconductor structure includes another dielectric layer disposed on a portion of the dielectric layer in the normal region and a portion of the conductive layer in the normal region and on the protective layer.


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