The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Dec. 30, 2021
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Hubei, CN;

Inventors:

Le Li, Hubei, CN;

Jun Zhou, Hubei, CN;

Sheng Hu, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02016 (2013.01); H01L 21/02019 (2013.01); H01L 27/1203 (2013.01);
Abstract

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes: providing a device wafer and a carrier wafer, the device wafer including an SOI substrate comprising, stacked from the bottom upward, a lower substrate, a buried insulator layer and a semiconductor layer; bonding the device wafer at a front side thereof to the carrier wafer; removing at least the lower substrate through thinning the device wafer from a backside thereof, wherein the backside of the device wafer opposes the front side thereof; and providing a high-resistance substrate and bonding the device wafer at the backside thereof to the high-resistance substrate, the high-resistance substrate having a resistivity higher than that of the lower substrate. With the present disclosure, lower signal loss and improved signal linearity can be achieved while avoiding a significant cost increase.


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