The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Oct. 27, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tsukasa Tokutomi, Kamakura, JP;

Masanobu Shirakawa, Chigasaki, JP;

Kengo Kurose, Tokyo, JP;

Marie Takada, Yokohama, JP;

Ryo Yamaki, Yokohama, JP;

Kiyotaka Iwasaki, Yokohama, JP;

Yoshihisa Kojima, Kawasaki, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01); G11C 16/08 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 29/52 (2013.01); G11C 16/08 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The memory controller is configured: to store, in a buffer, a data set read from a cell unit, and an expected data set generated by an error correction on the data set; to count a number of first and second memory cells corresponding to a first and a second combination of data in the data set and the expected data set, respectively, among the memory cells in the cell unit; to calculate a shift amount of a read voltage used in a read operation from the cell unit, based on the number of the first and second memory cells; and to apply the shift amount to a next read operation from the first cell unit.


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