The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Feb. 03, 2022
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Kazuki Mori, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/38 (2014.01); B23K 26/70 (2014.01); G01N 21/64 (2006.01); B23K 101/36 (2006.01);
U.S. Cl.
CPC ...
B23K 26/38 (2013.01); B23K 26/702 (2015.10); G01N 21/643 (2013.01); B23K 2101/36 (2018.08);
Abstract

Irradiation conditions for a laser beam to respective ones of a plurality of regions included in the upper surface of an ingot are set according to the numbers of photons of fluorescence occurring when excitation light is irradiated to the respective regions. Here, it is to be understood that the number of the photons of the fluorescence occurring from a region of an ingot depends on the concentration of an impurity doped in the ingot. A separation layer can therefore be formed at a uniform depth from the upper surface of the ingot even if regions of different impurity concentrations are included in the ingot. It is hence possible to reduce a kerf loss when wafers are sliced from an ingot.


Find Patent Forward Citations

Loading…