The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12089504 B1

Date of Patent:

Sep. 10, 2024

Filed:

Jun. 29, 2021

Magnetic random access memory device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yen-Tsai Yi, Tainan, TW;

Wei-Chuan Tsai, Changhua County, TW;

Jin-Yan Chiou, Tainan, TW;

Hsiang-Wen Ke, Kaohsiung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Jami Valentine Miller

Int. Cl.

CPC ...

H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);

U.S. Cl.

CPC ...

H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02);

Abstract

A method for fabricating a magnetic random access memory (MRAM) device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, forming a first top electrode on the MTJ stack, and then forming a second top electrode on the first top electrode. Preferably, the first top electrode includes a gradient concentration while the second top electrode includes a non-gradient concentration.

Find Patent Forward Citations

Yi, Yen-Tsai. (2024). Magnetic random access memory device and method for fabricating the same (U.S. Patent No. 12089504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12089504

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