The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Oct. 30, 2019
Air Water Inc., Osaka, JP;
Shigeomi Hishiki, Nagano, JP;
Keisuke Kawamura, Nagano, JP;
Air Water Inc., Osaka, JP;
Abstract
A compound semiconductor device, a compound semiconductor substrate, and a method for manufacturing of a compound semiconductor device. Compound semiconductor devicecomprises Si substratewhich has a shape surrounding holewhen viewed in a plane, SIC layerformed on top surfaceof Si substrateand covers hole, nitride layercontaining Ga formed on the top surface side of SiC layer, source electrode, drain electrode, and gate electrodeformed on the top surface side of nitride layer. The current flowing between source electrodeand drain electrodecan be controlled by the voltage applied to gate electrode. The Si substrate does not exist in the area RG where source electrode, drain electrode, and gate electrodeoverlap the area when viewed from the direction orthogonal to top surfaceof Si substrate