The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Dec. 09, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Meng-Han Lin, Hsinchu, TW;
Te-Hsin Chiu, Miaoli County, TW;
Wei Cheng Wu, Zhubei, TW;
Te-An Chen, Beitun, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/768 (2006.01); H01L 23/64 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/92 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/823481 (2013.01); H01L 27/0629 (2013.01); H01L 27/0805 (2013.01); H01L 27/0811 (2013.01);
Abstract
A semiconductor device and a manufacturing method thereof are provided. The method includes forming an isolation structure in a substrate to define an isolating region and forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern. The first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.